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with ultrafast soft recovery diode IRGR4045DPBF 1 www.irf.com october 10, 2012 ?

? features ? low v ce (on) trench igbt technology ? low switching losses ? maximum junction temperature 175 c ? 5 s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free, rohs compliant benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi * qualification standards can be found at http://www.irf.com/ e g n-channel c g c e gate colletor emitter absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25 maximum power dissipation w p d @ t c =100 maximum power dissipation t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r ? ??? ??? 1.9 r ? ??? ??? 6.8 r ? ??? ??? 50 r ?
IRGR4045DPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 15v, l = 1.0mh, r g = 47 ?? pulse width limited by max. junction temperature. ?

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when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to applicati on note #an-994. maximum limits are based on statistical sample size characterization. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter b reakdow n vol tage 600 ? ? v v ge = 0v , i c =100 a ? v (br)ce s / ? t j t emper atur e coeff . of b r eak down vol tage ?0.36 ? v/c v ge = 0v , i c = 250 a ( 25 -175 o c ) ?1.7 2.0 i c = 6.0a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.07 ? v i c = 6.0a, v ge = 15v, t j = 150c 5,6 ,7,9 , ?2.14 ? i c = 6.0a, v ge = 15v, t j = 175c 10 , 11 v ge (t h) gate threshold voltage 3.5 ? 6.5 v v ce = v ge , i c = 150 a ? v ge ( t h ) / ? tj threshold voltage temp. coefficient ? -13 ? mv/c v ce = v ge , i c = 250 a ( 25 -175 o c ) gfe forward transconductance ? 5.8 ? s v ce = 25v , i c = 6.0a, pw =80 ? s i ces ?? 25 a v ge = 0v ,v ce = 600v ? ? 250 v ge = 0v, v ce = 600v, t j =175c 8 v fm ? 1.60 2.30 v i f = 6.0a ?1.30 ? i f = 6.0a, t j = 175c i ge s gate-to-emitter leakage current ? ? 100 na v ge = 20 v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) ? 13 19.5 i c = 6.0a 24 q ge gate-to-emitter charge (turn-on) ? 3.1 4.65 nc v cc = 400v ct 1 q gc gate-to-collector charge (turn-on) ? 6.4 9.6 v ge = 15v e on turn-on switching loss ? 56 86 i c = 6.0a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 122 143 jr g = 47 ? , l=1mh, l s = 150nh, t j = 25c ct 4 e total total switching loss ? 178 229 e ner gy los s es i nclude tail and di ode r ever s e recover y t d(on) turn-on delay time ? 27 35 i c = 6.0a, v cc = 400v t r rise time ? 11 15 ns r g = 47 ? , l=1mh, l s = 150nh ct 4 t d(off) turn-off delay time ? 75 93 t j = 25c t f fall time ? 17 22 e on turn-on switching loss ? 140 ? i c = 6.0a, v cc = 400v, v ge = 15v 13 , 15 e off turn-off switching loss ? 189 ? j r g = 47 ? , l=1mh, l s = 150nh, t j = 175c ct 4 e total total switching loss ? 329 ? e ner gy los s es i nclude tail and di ode r ever s e recover y wf1,wf 2 t d(on) turn-on delay time ? 26 ? i c = 6.0a, v cc = 400v 14 , 16 t r rise time ? 12 ? ns r g = 47 ? , l=1mh, l s = 150nh ct 4 t d(off) turn-off delay time ? 95 ? t j = 175c wf1,wf 2 t f fall time ? 32 ? c ies input capacitance ? 350 ? v ge = 0v 23 c oes output capacitance ? 29 ? v cc = 30v c res reverse transfer capacitance ? 10 ? f = 1mhz t j = 175c, i c = 24a 4 rbsoa reverse bias safe operating area full square v cc = 500v, vp =600v ct 2 r g = 100 ? , v ge = +20v to 0v v cc = 400v, vp =600v 22 r g = 100 ? , v ge = +15v to 0v ct 3 , w f 4 erec reverse recovery energy of the diode ? 178 ? jt j = 175 o c 17 , 18 , 19 trr diode reverse recovery time ? 74 ? ns v cc = 400v, i f = 6.0a 20,21 irr peak reverse recovery current ? 12 ? a v ge = 15v, rg = 47 ? , l=1mh, l s =150nh wf3 diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area 5 ? s pf ct 6 9 , 10 , 11, 12 conditions ?
IRGR4045DPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 175c, v ge = 20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 3 - forward soa, t c = 25c, t j ? 175c, v ge = 15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 80 p t o t ( w ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 14 i c ( a ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 1 10 100 1000 v ce (v) 0.1 1 10 100 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v
IRGR4045DPBF 4 www.irf.com fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp = 80 s fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10 s fig. 11 - typical v ce vs. v ge t j = 175c 0.0 1.0 2.0 3.0 v f (v) 0 2 4 6 8 10 12 14 16 18 20 i f ( a ) -40c 25c 175c 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 5 101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 3.0a i ce = 6.0a i ce = 12a 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) top v ge = 18v v ge = 15v v ge = 12v v ge = 10v bottom v ge = 8.0v 4 6 8 10121416 v ge, gate-to-emitter voltage (v) 0 2 4 6 8 10 12 14 16 18 20 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 175c
IRGR4045DPBF www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 175c; l = 1mh; v ce = 400v, r g = 47 ? ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 175c; l = 1mh; v ce = 400v, i ce = 6.0a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 175c; l=1mh; v ce = 400v r g = 47 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 175c; l=1mh; v ce = 400v i ce = 6.0a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 175c fig. 18 - typical diode i rr vs. r g t j = 175c; i f = 6.0a 02468101214 i c (a) 50 100 150 200 250 300 350 400 e n e r g y ( j ) e off e on 2 4 6 8 10 12 14 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 rg ( ? ) 60 80 100 120 140 160 180 200 220 e n e r g y ( j ) e off e on 0 25 50 75 100 125 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 2 4 6 8 10 12 14 i f (a) 0 5 10 15 20 25 30 i r r ( a ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 25 50 75 100 125 r g ( ?? 6 8 10 12 14 16 18 20 22 i r r ( a )
IRGR4045DPBF 6 www.irf.com fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 175c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 6.0a; t j = 175c fig. 24 - typical gate charge vs. v ge i ce = 6.0a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs. short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 175c 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 200 400 600 800 1000 1200 di f /dt (a/ s) 6 8 10 12 14 16 18 20 i r r ( a ) 2 4 6 8 10 12 14 i f (a) 50 100 150 200 250 300 350 e n e r g y ( j ) r g = 10 ? r g = 22 ? r g = 47 ? r g = 100 ? 8 1012141618 v ge (v) 0 5 10 15 20 t i m e ( s ) 10 20 30 40 50 c u r r e n t ( a ) t sc i sc 0 2 4 6 8 10 12 14 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 0 500 1000 1500 di f /dt (a/ s) 200 400 600 800 1000 1200 q r r ( n c ) 10 ? 22 ? 100 ? 47 ? 6.0a 12a 3.0a
IRGR4045DPBF www.irf.com 7 fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.0301 0.000004 0.7200 0.000067 0.7005 0.000898 0.4479 0.005416 fig. 26. maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.2056 0.000019 1.4132 0.000095 3.3583 0.001204 1.8245 0.009127
IRGR4045DPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit l rg 80 v dut 480v + - fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement
IRGR4045DPBF www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 wf.3- typ. diode recovery waveform @ t j = 175c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 0 50 100 150 200 250 300 350 400 450 500 -2-1012345678 time (us) vce (v) -20 -10 0 10 20 30 40 50 60 70 80 v ce i ce -600 -500 -400 -300 -200 -100 0 100 -0.05 0.05 0.15 0.25 time (s) v f (v) -20 -15 -10 -5 0 5 10 15 pea k i rr t rr q rr 10% pea k irr -100 0 100 200 300 400 500 600 -0.2 0 0.2 0.4 0.6 0.8 1 time(s) v ce (v) -2 0 2 4 6 8 10 12 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 4.3 4.5 4.7 time (s) v ce (v) -5 0 5 10 15 20 25 30 test current 90% test current 5% v ce 10% test current tr eon loss
IRGR4045DPBF 10 www.irf.com

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IRGR4045DPBF www.irf.com 11

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2012

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